收藏本站
NTK3142P
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t = 5 s (Note 3)
Junction ? to ? Ambient – Steady State Minimum Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
315
250
440
Unit
° C/W
3. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface ? mounted on FR4 board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 100 m A
I D = ? 100 m A, Reference to 25 ° C
? 20
14
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 16 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 2.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 5 V
$ 1
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 0.4
? 2.0
? 1.3
V
mV/ ° C
Drain ? to ? Source On Resistance
Drain ? to ? Source On Resistance
R DS(ON)
R DS(ON)
V GS = ? 4.5V, I D = ? 260 mA
V GS = ? 4.5V, I D = ? 10 mA
V GS = ? 2.5 V, I D = ? 1 mA
2.9
2.7
4.1
4.0
3.4
5.3
W
W
V GS = ? 1.8 V, I D = ? 1 mA
6.1
10
Forward Transconductance
g FS
V DS = ? 5 V, I D = ? 10 mA
73
mS
CAPACITANCES
Input Capacitance
C ISS
15.3
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = ? 10 V
4.3
2.3
pF
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 6)
Turn ? On Delay Time
t d(ON)
8.4
16
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 5 V, I D = ? 100 mA,
R G = 6 W
15.3
37.5
22.7
28
80
43
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = ? 10 mA
T J = 25 ° C
T J = 125 ° C
0.69
0.56
? 1.2
V
Reverse Recovery Time
t RR
37
80
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, V DD = ? 20 V,
dI SD /dt = 100 A/ m s, I S = ? 1.0 A
15.9
21.1
20
30
50
70
ns
nC
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTLGD3502NT2G MOSFET N-CH DUAL 20V 6-DFN
NTLGF3402PT2G MOSFET P-CH 20V 2.3A 6-DFN
NTLJD2104PTBG MOSFET P-CH DUAL 12V 4.3A 6WDFN
NTLJD2105LTBG MOSFET LOAD SW 8V 4.3A 6-WDFN
NTLJD3115PTAG MOSFET P-CH DUAL 20V 4.1A 6-WDFN
NTLJD3119CTBG MOSF N/P-CH 20V 2.6A/2.3A 6WDFN
NTLJD3181PZTBG MOSFET P-CH DUAL 20V 4A 6WDFN
NTLJD3182FZTBG MOSFET P-CH 20V 2.2A 6-WDFN
相关代理商/技术参数
NTK3142PT1H 制造商:ON Semiconductor 功能描述:HALOGEN FREE PFET SOT723
NTK3142PT5G 功能描述:MOSFET PFET SOT723 20V 2.8A 3.4mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTL02C10NTRF 制造商:NIC Components Corp 功能描述:- Tape and Reel
NTL02C1N8TRF 制造商:NIC Components Corp 功能描述:- Tape and Reel 制造商:NIC Components Corp 功能描述:Ind Chip Thin Film 1.8nH 0.2nH 500MHz 10Q-Factor 420mA 0201 T/R
NTL02C4N7TRF 制造商:NIC Components Corp 功能描述:- Tape and Reel
NTL02C8N2TRF 制造商:NIC Components Corp 功能描述:THIN FILM,0201,8.2NH,.2NH,TR,HAZMAT - Tape and Reel
NTL04B1N2TRF 制造商:NIC Components Corp 功能描述:- Tape and Reel
NTL04B1N3TRF 制造商:NIC Components Corp 功能描述:- Tape and Reel